DocumentCode
2268575
Title
A new approach for 2-D mesh generation for complex device structures
Author
Garreton, G. ; Villablanca, L. ; Strecker, N. ; Fichtner, W.
Author_Institution
Integrated Syst. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
fYear
1994
fDate
5-6 Jun 1994
Firstpage
159
Lastpage
162
Abstract
Mesh generation has become one of the most important steps in technology CAD (TCAD). The ever increasing complexity of modern semiconductor devices together with certain restrictions on the grid parameters (non-obtuse angles, desirable aspect ratios, etc.) put stringent requirements on the performance of mesh generators. This paper formulates new aspects to consider in the mesh generation process
Keywords
electronic engineering computing; mesh generation; semiconductor device models; simulation; 2D mesh generation; FEM; complex device structures; finite element method; grid parameters; semiconductor devices; Binary trees; Data structures; Geometry; Impurities; Laboratories; Mesh generation; Modeling; Numerical simulation; Refining; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
Conference_Location
Honolulu, HI
Print_ISBN
0-7803-1867-6
Type
conf
DOI
10.1109/NUPAD.1994.343467
Filename
343467
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