Optimization of switching losses and EMI in a gate driver circuit for IGBT devices

Author

Wang, Han ; Zhang, Bo

Author_Institution

State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2010

fDate

28-30 July 2010

Firstpage

532

Lastpage

535

Abstract

IGBT devices are increasingly used in power electronic equipment due to their high power handling capability. The aim of this paper is to propose a circuit topology that allows an acceptable compromise between switching speed, power dissipation and electromagnetic radiation of an IGBT device, by suitably shaping the gate current during the switching transients. The paper begins with an analysis of the switching waveforms highlighting the parameters which affect the switching characteristics. Stimulation results are presented for an IGBT device in a hard switching application.

Keywords

driver circuits; electromagnetic interference; insulated gate bipolar transistors; EMI; IGBT devices; circuit topology; electromagnetic radiation; gate current; gate driver circuit; hard switching application; power dissipation; power electronic equipment; switching characteristics; switching losses; switching speed; switching transients; switching waveforms; Electromagnetic interference; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems (ICCCAS), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-8224-5

Type

conf

DOI

10.1109/ICCCAS.2010.5581938

Filename

5581938