DocumentCode :
2268763
Title :
A novel PMOS controlled high voltage current source
Author :
Hu, Hao ; Chen, Xingbi
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, UESTC, Chengdu, China
fYear :
2010
fDate :
28-30 July 2010
Firstpage :
514
Lastpage :
517
Abstract :
A novel high voltage current source for providing an initial bias current to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. A PMOS transistor is included to turn the high voltage current source off to eliminate power consumption when the start up phase is over. Simulation results indicate the high voltage current source can start and restart as designed. The proposed structure is believed to be more energy saving and cost effective compared with other solutions.
Keywords :
MOS integrated circuits; constant current sources; switched mode power supplies; PMOS controlled high voltage current source; enhanced mode VDMOS transistor; initial bias current; integrated switched mode power supply; Logic gates; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications, Circuits and Systems (ICCCAS), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-8224-5
Type :
conf
DOI :
10.1109/ICCCAS.2010.5581942
Filename :
5581942
Link To Document :
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