Application of field plate in SLOP-LDMOS

Author

Wang, Wenlian ; Zhang, Bo ; Zehong Li ; Li, Zhaoji

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2010

fDate

28-30 July 2010

Firstpage

507

Lastpage

509

Abstract

This paper investigates the effect of field plate on a new super junction LDMOS-surface low on-resistance path (SLOP) LDMOS. The surface electric field of SLOP-LDMOS focuses at source and drain end because of the RESURF structure under super junction (SJ). Field plate improves electric field distribution of SLOP-LDMOS by improving the charge balance of SJ, which is different from conventional LDMOS. Improving charge balance reduces the peaks of electric field, which increases the breakdown voltage (BV). Numerical simulation results indicate that the BV of SLOP-LDMOS is increased to 300 V from 180 V by employing field plate. The experimental result shows that the SLOP-LDMOS with drift length of 15 μm exhibits a BV of 290 V.

Keywords

CMOS integrated circuits; MOSFET; numerical analysis; SJ charge balance; SLOP-LDMOS electric field distribution; breakdown voltage; drift length; field plate; numerical simulation; super junction LDMOS; surface electric field; surface low on-resistance path; voltage 300 V to 180 V;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems (ICCCAS), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-8224-5

Type

conf

DOI

10.1109/ICCCAS.2010.5581943

Filename

5581943