DocumentCode
2268933
Title
Two dimensional simulation of silicide growth and flow
Author
Cea, Stephen ; Law, Mark E.
Author_Institution
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fYear
1994
fDate
5-6 Jun 1994
Firstpage
113
Lastpage
116
Abstract
A two dimensional, physically based process simulator has been developed, which includes the ability to simulate both the growth of oxides and silicides. Object oriented techniques were utilized so that both oxidation and silicidation share much of the same code, which reduces program size and makes further development easier
Keywords
C language; digital simulation; object-oriented methods; oxidation; semiconductor device metallisation; semiconductor process modelling; C++ program; object oriented techniques; oxidation; oxide growth; physically based process simulator; program size; silicidation; silicide growth; two dimensional simulation; CMOS technology; Crystalline materials; Equations; Object oriented modeling; Oxidation; Semiconductor device modeling; Silicidation; Silicides; Silicon; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
Conference_Location
Honolulu, HI
Print_ISBN
0-7803-1867-6
Type
conf
DOI
10.1109/NUPAD.1994.343478
Filename
343478
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