Dynamic grain-growth and static clustering effects on dopant diffusion in polysilicon

Author

Puchner, H. ; Selberherr, S.

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Austria

fYear

1994

fDate

5-6 Jun 1994

Firstpage

109

Lastpage

112

Abstract

A two-dimensional simulation model for dopant diffusion in polysilicon has been developed, which includes dopant clustering in grain interiors as well as in grain boundaries. The grain growth model is coupled with the diffusion coefficient of the dopants and the process temperature. For all high dose implantation cases the trapping/emission mechanism in polysilicon and the grain growth are the major effects during thermal treatment processes

Keywords

doping profiles; electron traps; electron-hole recombination; elemental semiconductors; grain boundary diffusion; grain boundary segregation; grain growth; impurity distribution; ion implantation; semiconductor process modelling; silicon; Si; diffusion coefficient; dopant clustering; dopant diffusion; dynamic grain-growth; grain boundaries; grain growth model; grain interiors; high dose implantation; polysilicon; process temperature; static clustering effects; thermal treatment processes; trapping/emission mechanism; two-dimensional simulation model; Fabrication; Grain boundaries; Grain size; Kinetic theory; MOSFET circuits; Microelectronics; Predictive models; Semiconductor process modeling; Solid modeling; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-1867-6

Type

conf

DOI

10.1109/NUPAD.1994.343479

Filename

343479