Title :
A more efficient approach for Monte Carlo simulation of deeply-channeled implanted profiles in single-crystal silicon
Author :
Yang, S.-H. ; Lim, D. ; Morris, S. ; Tasch, A.F.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
In this paper we report new approach for the Monte Carlo simulation of deeply-channeled implanted profiles in single-crystal silicon with greatly improved efficiency. This approach has been successfully implemented in the UT Monte Carlo code (UT-MARLOWE). A time saving of up to 212X has been observed with a 4-stage simulation. A simulation of arsenic implants with 15 keV implant energy typically takes about 12 minutes on a workstation
Keywords :
Monte Carlo methods; arsenic; digital simulation; doping profiles; elemental semiconductors; ion implantation; semiconductor device models; silicon; 15 keV; Monte Carlo simulation; Si:As; UT Monte Carlo code; UT-MARLOWE; deeply-channeled implanted profiles; digital simulation; four-stage simulation; implant energy; single-crystal silicon; Computational modeling; Discrete event simulation; Fabrication; Implants; Monte Carlo methods; Scattering; Semiconductor device noise; Semiconductor devices; Silicon; Workstations;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-1867-6
DOI :
10.1109/NUPAD.1994.343482
