Non-ideal contacts-Schottky diode soft-breakdown and hybrid diode with contact over pn-junction

Author

Schroeder, D. ; Ostermann, T. ; Kalz, O.

Author_Institution

Tech. Univ. Hamburg-Harburg, Germany

fYear

1994

fDate

5-6 Jun 1994

Firstpage

75

Lastpage

78

Abstract

We applied our model of non-ideal metal-semiconductor contacts to contacts on material of various low and high dopings and on pn-junctions. Respective simulation results are presented in the paper. First, the apparent barrier lowering, which is due to tunneling, is shown as a function of doping and contact voltage drop. The soft breakdown of a Schottky diode under reverse bias is simulated. Finally we investigate how the potential in a hybrid diode is affected where the pn-junction is covered by a metal contact

Keywords

Schottky diodes; digital simulation; electric breakdown; minority carriers; semiconductor device models; semiconductor-metal boundaries; tunnelling; Schottky diode soft-breakdown; apparent barrier lowering; contact voltage drop; hybrid diode; nonideal metal-semiconductor contacts; pn-junction; reverse bias; simulation results; tunneling; Doping; Inorganic materials; Poisson equations; Schottky barriers; Schottky diodes; Semiconductor diodes; Semiconductor process modeling; Thermionic emission; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-1867-6

Type

conf

DOI

10.1109/NUPAD.1994.343487

Filename

343487