DocumentCode :
2269129
Title :
Investigation of the radial uniformity of planar inductively coupled RF discharges using a self-consistent two-dimensional kinetic model
Author :
Kortshagen, Uwe
Author_Institution :
Dept. of Phys., Wisconsin Univ., Madison, WI, USA
fYear :
1995
fDate :
5-8 June 1995
Firstpage :
126
Abstract :
Summary form only given. High-density inductively coupled RF plasmas in planar geometry have attracted rapidly growing interest for applications in the semiconductor manufacturing in the last years. One main advantage of these discharges is the possible independent control of the plasma density and the ion impact energies on a substrate to be processed. In this contribution we concentrate on the discussion of the radial uniformity of the plasma density, the potential profiles and the radial variation of particle fluxes and impact energies along the walls (substrate). The investigations presented are based on a fast self-consistent two-dimensional kinetic model for planar inductive discharges. Since these discharges are usually operated at low pressures (/spl les/10 mTorr), a spatially resolved description of the electron kinetics in the discharge can be achieved by the solution of the electron Boltzmann equation in the nonlocal approximation. The ion dynamics is treated by a two-dimensional fluid model, the electrodynamics by the two-dimensional solution of the complex wave equation.
Keywords :
Boltzmann equation; high-frequency discharges; plasma density; plasma diagnostics; plasma kinetic theory; wave equations; 10 mtorr; complex wave equation; electrodynamics; electron Boltzmann equation; electron kinetics; ion dynamics; ion impact energies; low pressure discharge; nonlocal approximation; particle flux; planar geometry; planar inductively coupled RF discharges; plasma density; potential profiles; self-consistent two-dimensional kinetic model; semiconductor manufacturing; spatially resolved description; two-dimensional fluid model; two-dimensional solution; Electrons; Geometry; Kinetic theory; Plasma applications; Plasma density; Plasma materials processing; Radio frequency; Semiconductor device manufacture; Spatial resolution; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 1995. IEEE Conference Record - Abstracts., 1995 IEEE International Conference on
Conference_Location :
Madison, WI, USA
ISSN :
0730-9244
Print_ISBN :
0-7803-2669-5
Type :
conf
DOI :
10.1109/PLASMA.1995.531541
Filename :
531541
Link To Document :
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