Monte Carlo modeling of infrared multiple-quantum-well phototransistor

Infrared multiple-quantum-well (MQW) phototransistor is proposed and considered theoretically. The MQW phototransistor utilizes intersubband optical absorption and exhibits giant photocurrent gain which is due to the thermionic injection of hot electrons across the emitter barrier and fast electron transit through the MQW base. We use Monte Carlo simulation to study the hot electron transport effect on performance of MQW phototransistor for different base widths and electron injection energies. Transition from near ballistic hot electron transport to diffusive transport decreases the responsivity but its value can be significant in this case as well