Analysis of temperature dependence of Si-Ge HBT

Author

Krishna, G. Hari Rama ; Aditya, Amit Kr ; Chakrabarti, N.B. ; Banerjee, Swapna

Author_Institution

Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India

fYear

1995

fDate

4-7 Jan 1995

Firstpage

268

Lastpage

271

Abstract

In this paper the dependence of characteristics of SiGe heterojunction bipolar transistors on Ge mole-fraction and also variation of gain with temperature are presented. The simulation is carried out using a two dimensional device simulator, BISOF, based on finite element method. It is observed that the current gain of graded HBT improves when the temperature falls from 300 K to 200 K which matches well with the available experimental results

Keywords

Ge-Si alloys; finite element analysis; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; simulation; thermal analysis; 200 to 300 K; BISOF; FEM; Ge mole-fraction; SiGe; current gain; finite element method; graded HBT; heterojunction bipolar transistors; temperature dependence; two dimensional device simulator; Doping; Equations; Finite element methods; Germanium silicon alloys; Heterojunction bipolar transistors; Ohmic contacts; Silicon alloys; Silicon germanium; Temperature dependence; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, 1995., Proceedings of the 8th International Conference on

Conference_Location

New Delhi

ISSN

1063-9667

Print_ISBN

0-8186-6905-5

Type

conf

DOI

10.1109/ICVD.1995.512122

Filename

512122