Phenomenological modeling of plasma generation for real-time control of RIE systems

Author

Chandhok, Manish ; Giles, Martin D. ; Hanish, Peter D. ; Grizzle, Jessy W.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1994

fDate

5-6 Jun 1994

Firstpage

33

Lastpage

36

Abstract

A phenomenological approach to modeling plasma parameters in a reactive ion etching system is described, combining a simplified continuum model of electrons and ions with a continuously stirred tank reactor model of plasma chemistry. The model relates equipment parameters such as power and pressure to parameters central to equipment control such as reactive radical concentration. The simplified models allow transient response characteristics of the equipment to be calculated in reasonable time

Keywords

VLSI; integrated circuit manufacture; process control; semiconductor process modelling; sputter etching; transient analysis; transient response; RIE systems; VLSI circuit fabrication; continuously stirred tank reactor model; equipment control; feedback control; phenomenological modeling; plasma generation; reactive ion etching system; reactive radical concentration; real-time control; simplified continuum model; transient response characteristics; Control system synthesis; Electrons; Equations; Etching; Plasma applications; Plasma chemistry; Plasma sheaths; Plasma simulation; Real time systems; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-1867-6

Type

conf

DOI

10.1109/NUPAD.1994.343497

Filename

343497