DocumentCode
2269437
Title
Analysis of amorphous-silicon devices
Author
Valdinoci, M. ; Gnudi, A. ; Rudan, M. ; Fortunato, G.
Author_Institution
Bologna Univ., Italy
fYear
1994
fDate
5-6 Jun 1994
Firstpage
19
Lastpage
22
Abstract
In recent years, Amorphous-Silicon devices have found interesting applications in large-area devices, such as the driving circuitry for flat-panel displays, scanner and print arrays, or chemical sensors. For this reason, many investigations have been carried out for the purpose of improving their performance, especially as far as stability and speed are concerned. To describe their electrical characteristics, analytical models or ad hoc numerical analyses have been proposed elsewhere. In this paper, the implementation of the model for amorphous silicon within the general-purpose simulator HFIELDS is shown, along with an application to a realistic case
Keywords
amorphous semiconductors; carrier mobility; digital simulation; electron-hole recombination; elemental semiconductors; semiconductor device models; silicon; thin film transistors; HFIELDS; Si; TFTs; amorphous-silicon devices; chemical sensors; driving circuitry; flat-panel displays; general-purpose simulator; large-area devices; print arrays; speed; stability; Amorphous silicon; Charge carrier processes; Circuits; Conducting materials; Displays; Electron traps; Impurities; Poisson equations; Radiative recombination; Sensor arrays;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
Conference_Location
Honolulu, HI
Print_ISBN
0-7803-1867-6
Type
conf
DOI
10.1109/NUPAD.1994.343500
Filename
343500
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