• DocumentCode
    2269437
  • Title

    Analysis of amorphous-silicon devices

  • Author

    Valdinoci, M. ; Gnudi, A. ; Rudan, M. ; Fortunato, G.

  • Author_Institution
    Bologna Univ., Italy
  • fYear
    1994
  • fDate
    5-6 Jun 1994
  • Firstpage
    19
  • Lastpage
    22
  • Abstract
    In recent years, Amorphous-Silicon devices have found interesting applications in large-area devices, such as the driving circuitry for flat-panel displays, scanner and print arrays, or chemical sensors. For this reason, many investigations have been carried out for the purpose of improving their performance, especially as far as stability and speed are concerned. To describe their electrical characteristics, analytical models or ad hoc numerical analyses have been proposed elsewhere. In this paper, the implementation of the model for amorphous silicon within the general-purpose simulator HFIELDS is shown, along with an application to a realistic case
  • Keywords
    amorphous semiconductors; carrier mobility; digital simulation; electron-hole recombination; elemental semiconductors; semiconductor device models; silicon; thin film transistors; HFIELDS; Si; TFTs; amorphous-silicon devices; chemical sensors; driving circuitry; flat-panel displays; general-purpose simulator; large-area devices; print arrays; speed; stability; Amorphous silicon; Charge carrier processes; Circuits; Conducting materials; Displays; Electron traps; Impurities; Poisson equations; Radiative recombination; Sensor arrays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    0-7803-1867-6
  • Type

    conf

  • DOI
    10.1109/NUPAD.1994.343500
  • Filename
    343500