Analytical calculations of a figure of merit for novel MOSFET architecture for the sub 0.25 μm range

Author

Biesemans, Serge ; Kubicek, Stefan ; De Meyer, Kristin

Author_Institution

IMEC, Leuven, Belgium

fYear

1994

fDate

5-6 Jun 1994

Firstpage

11

Lastpage

14

Abstract

We present a simple analytical model to evaluate the Short Channel Effect (SCE) and to compare quantitatively how different MOSFET architectures can suppress it. The resulting figure of merit will allow us to rank the structures by their SCE suppressing ability. The model itself is based on an explicit solution of the 2D Poisson equation. A discussion on this model and on the limits of the existing solutions to model the SCE is given. Choosing carefully the boundary conditions and including efficiently the junction depth results in model improvements. The model can act as a framework for a full 2D theory

Keywords

MOSFET; semiconductor device models; stochastic processes; 0.25 micron; 2D Poisson equation; MOSFET architecture; SCE suppressing ability; analytical model; boundary conditions; figure of merit; full 2D theory; short channel effect; Boundary conditions; Laplace equations; MOSFET circuits; Magneto electrical resistivity imaging technique; Numerical simulation; Scalability; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-1867-6

Type

conf

DOI

10.1109/NUPAD.1994.343502

Filename

343502