Title :
A Low Power Ka-Band Receiver Front-End in 0.13μm SiGe BiCMOS for Space Transponders
Author :
Aflatouni, Firooz ; Hashemi, Hossein
Author_Institution :
Dept. of Electr. Eng. , Univ. of Southern California, Los Angeles, CA, USA
Abstract :
In direct-to-earth or deep space communication links, providing energy is very expensive and therefore it is essential for the link receiver to consume very low power while providing high sensitivity and gain. This paper presents a low power 0.13 ¿m SiGe Ka-band receiver where the current sharing technique is used to reduce the power consumption of the front-end to 5.8 mW while providing 17 dB of RF-IF conversion gain, double side band noise figure less than 8.9 dB across the bandwidth, and -1dB input referred compression point of -25 dBm.
Keywords :
BiCMOS integrated circuits; microwave receivers; silicon compounds; space communication links; BiCMOS; RF-IF conversion gain; SiGe; current sharing technique; deep space communication links; direct-to-earth communication links; link receiver; low power Ka-band receiver; size 0.13 micron; space transponders; BiCMOS integrated circuits; Costs; Energy consumption; Germanium silicon alloys; Image converters; Inductors; Noise figure; Phase locked loops; Silicon germanium; Transponders;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Conference_Location :
Greensboro, NC
Print_ISBN :
978-1-4244-5191-3
Electronic_ISBN :
1550-8781
DOI :
10.1109/csics.2009.5315570
