• DocumentCode
    2269768
  • Title

    A 0.25μm InP DHBT 200GHz+ Static Frequency Divider

  • Author

    D´Amore, M. ; Monier, C. ; Lin, S. ; Oyama, B. ; Scott, D. ; Kaneshiro, E. ; Gutierrez-Aitken, A. ; Oki, A.

  • Author_Institution
    Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA
  • fYear
    2009
  • fDate
    11-14 Oct. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Static frequency dividers are widely used technology performance benchmark circuits. Using a 0.25 mum 530 GHz fT I 600 GHz+ fmax InP DHBT process, a static frequency divider circuit has been designed, fabricated, and measured to operate up to 200.6 GHz. The divide-by-2 core flip/flop dissipates 228 mW.
  • Keywords
    frequency dividers; heterojunction bipolar transistors; DHBT process; double heterojunction bipolar transistor; frequency 530 GHz; frequency 600 GHz; power 228 mW; size 0.25 mum; static frequency divider circuit; technology performance benchmark circuits; Current density; DH-HEMTs; Dielectrics; Frequency conversion; Frequency measurement; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit technology; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
  • Conference_Location
    Greensboro, NC
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-4244-5191-3
  • Electronic_ISBN
    1550-8781
  • Type

    conf

  • DOI
    10.1109/csics.2009.5315625
  • Filename
    5315625
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2269768