Hot and cold phonons induced by electric field and resonant Raman scattering in GaN/AlN triangular quantum well

Author

Xu, Guibao ; Tripathy, Suvranta K. ; Mu, Xiaodong ; Ding, Yujie J. ; Wang, Kejia ; Yu, Cao ; Jena, Debdeep ; Khurgin, Jacob B.

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

We have evidenced hot and cold longitudinal-optical (LO) phonons induced by electric field and resonant Raman scattering in GaN/AlN triangular quantum well, probed by first-order and second-order resonant Raman scattering of 3-ps light pulses.

Keywords

III-V semiconductors; Raman spectra; aluminium compounds; electric fields; gallium compounds; phonons; semiconductor quantum wells; wide band gap semiconductors; GaN-AlN; cold phonons; electric field; hot phonons; light pulses; longitudinal-optical phonons; resonant Raman scattering; semiconductor quantum wells; time 3 ps; triangular quantum well; Electrons; Gallium nitride; Phonons; Photonic band gap; Pulse measurements; Raman scattering; Resonance light scattering; Spectroscopy; Temperature; Wavelength measurement; (190.5650) Raman effect; (190.7220) Upconversion; (300.6330) Spectroscopy, inelastic scattering including Raman; (300.6450) Spectroscopy, Raman;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572972