Title :
A charge-injection method for Gilbert cell biasing
Author :
NacEachern, L.A. ; Manku, Tajinder
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
A CMOS Gilbert cell mixer biasing topology is presented. The new biasing technique offers several key advantages over the traditional biasing arrangement. First, the new topology allows the designer to easily adjust the bias current present in the Gilbert cell input transistors, while maintaining bias currents in other portions of the circuit. Second, the mixer linearity can be improved using this biasing method by accurate adjustment of the input MOSFET operating point. Third, the biasing method reduces the “voltage headroom” difficulties inherent to the Gilbert cell, which uses a stacked arrangement of transistors. The importance of these adjustments with regard to the mixer conversion gain and IP3 is examined
Keywords :
CMOS analogue integrated circuits; mixers (circuits); CMOS mixer; Gilbert cell biasing; Gilbert mixer; RF input MOSFET operating point; biasing topology; charge-injection method; conversion gain; mixer linearity; voltage headroom; Cellular networks; Circuit topology; Helium; MOSFET circuits; Radio frequency; Resistors; Satellite broadcasting; Switches; TV; Telephony;
Conference_Titel :
Electrical and Computer Engineering, 1998. IEEE Canadian Conference on
Conference_Location :
Waterloo, Ont.
Print_ISBN :
0-7803-4314-X
DOI :
10.1109/CCECE.1998.682760