DocumentCode :
2270116
Title :
A charge-injection method for Gilbert cell biasing
Author :
NacEachern, L.A. ; Manku, Tajinder
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Volume :
1
fYear :
1998
fDate :
24-28 May 1998
Firstpage :
365
Abstract :
A CMOS Gilbert cell mixer biasing topology is presented. The new biasing technique offers several key advantages over the traditional biasing arrangement. First, the new topology allows the designer to easily adjust the bias current present in the Gilbert cell input transistors, while maintaining bias currents in other portions of the circuit. Second, the mixer linearity can be improved using this biasing method by accurate adjustment of the input MOSFET operating point. Third, the biasing method reduces the “voltage headroom” difficulties inherent to the Gilbert cell, which uses a stacked arrangement of transistors. The importance of these adjustments with regard to the mixer conversion gain and IP3 is examined
Keywords :
CMOS analogue integrated circuits; mixers (circuits); CMOS mixer; Gilbert cell biasing; Gilbert mixer; RF input MOSFET operating point; biasing topology; charge-injection method; conversion gain; mixer linearity; voltage headroom; Cellular networks; Circuit topology; Helium; MOSFET circuits; Radio frequency; Resistors; Satellite broadcasting; Switches; TV; Telephony;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering, 1998. IEEE Canadian Conference on
Conference_Location :
Waterloo, Ont.
ISSN :
0840-7789
Print_ISBN :
0-7803-4314-X
Type :
conf
DOI :
10.1109/CCECE.1998.682760
Filename :
682760
Link To Document :
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