Title :
Advanced InP HBT Technology at Northrop Grumman Aerospace Systems
Author :
Gutierrez-Aitken, Augusto ; Monier, Cedric ; Chang, Pablo ; Kaneshiro, Eric ; Scott, Dennis ; Chan, Beckie ; D´Amore, Matt ; Lin, Steven ; Oyama, Bert ; Sato, Ken ; Cavus, Abdullah ; Oki, Aaron
Author_Institution :
Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA
Abstract :
Northrop Grumman Aerospace Systems (NGAS) has been developing InP-based heterojunction bipolar transistor technology for next generation high performance aerospace, defense and commercial applications. We present highlights and status of our production and advanced InP HBT technologies including ultra-high speed 0.25 micron emitter InP HBT.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor technology; space vehicle electronics; HBT technology; InP; aerospace application; heterojunction bipolar transistor technology; size 0.25 micron; Circuits; DH-HEMTs; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; Production; RF signals; Radio frequency; Semiconductor device measurement; Space technology;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Conference_Location :
Greensboro, NC
Print_ISBN :
978-1-4244-5191-3
Electronic_ISBN :
1550-8781
DOI :
10.1109/csics.2009.5315670
