Title :
Noise characteristics of GaAs HBT´s
Author :
Henderson, G.N. ; Wu, D.-W.
Author_Institution :
Corp. R&D, Lowell, MA, USA
Abstract :
A complete characterization of the bias-, area-, and frequency-dependence of GaAs HBT noise characteristics is presented. It is shown that there is an optimum device area (emitter area) and bias condition for achieving a minimum noise figure, which for the M/A-COM process at 2 GHz occurs at an area of roughly 120 /spl mu/m/sup 2/ and a collector current of 2 mA yielding a minimum noise figure of 1.4 dB and an associated gain of 13 dB. The measured noise characteristics are validated by an extracted equivalent circuit model with associated noise sources.
Keywords :
III-V semiconductors; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; semiconductor device noise; 1.4 dB; 13 dB; 2 GHz; 2 mA; GaAs; GaAs HBT; M/A-COM process; area dependence; associated gain; bias dependence; equivalent circuit model; frequency dependence; minimum noise figure; noise characteristics; Circuit noise; Fingers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit noise; Noise figure; Noise measurement; Power dissipation; Virtual colonoscopy;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.512156
