InGaAs quantum dot population and polarisation dynamics for ultrafast pulse train amplification

Author

Gomis-Bresco, J. ; Dommers, S. ; Temnov, V. ; Woggon, U. ; Laemmlin, M. ; Bimberg, D. ; Malic, E. ; Richter, M. ; Scholl, E. ; Knorr, A.

Author_Institution

FB Phys., Univ. Dortmund, Dortmund

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

The ultrafast population and polarisation dynamics in electrically pumped InGaAs QDs is studied experimentally and theoretically. Limits for ultrafast pulse train amplification with THz repetition rates at high, electrically-injected, non-equilibrium carrier densities are discussed.

Keywords

III-V semiconductors; carrier density; electron beam pumping; gallium arsenide; high-speed optical techniques; indium compounds; light polarisation; quantum dot lasers; semiconductor optical amplifiers; semiconductor quantum dots; InGaAs; InGaAs quantum dot population; electrical injection; electrical pumping; nonequilibrium carrier densities; polarisation dynamics; ultrafast pulse train amplification; Delay effects; Gain measurement; Indium gallium arsenide; Optical scattering; Polarization; Pulse amplifiers; Pulse measurements; Quantum dots; Stimulated emission; Ultrafast optics; 030.6140 Spectroscopy, coherent transient; 320.0320 Ultrafast optics; 320.7130 Ultrafast processes in condensed matter, including semiconductors;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572994