Title :
L-band internally matched Si-MMIC low noise amplifier
Author :
Suematsu, N. ; Ono, M. ; Kubo, S. ; Sato, H. ; Iyama, Y. ; Ishida, Osamu
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kanagawa, Japan
Abstract :
A Si-MMIC low noise amplifier (LNA), fabricated in conventional 0.8 /spl mu/m Bi-CMOS process, was developed. This LNA is monolithically integrated on a low resistive Si substrate with coplanar waveguide (CPW) type matching circuits. At 1.9 GHz, noise figure of 2.7 dB and gain of 10 dB were obtained at 2 V/2 mA d.c. supply.
Keywords :
BiCMOS analogue integrated circuits; MMIC amplifiers; elemental semiconductors; impedance matching; silicon; 0.8 micron; 1.9 GHz; 10 dB; 2 V; 2 mA; 2.7 dB; Bi-CMOS process; CPW internal matching circuits; L-band; Si; Si MMIC low noise amplifier; low resistive Si substrate; monolithic integration; Circuits; Coplanar waveguides; Frequency dependence; Inductors; L-band; Low-noise amplifiers; Noise figure; Noise measurement; Radio frequency; Spirals;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.512157
