The effect of integration of strontium-bismuth-tantalate capacitors onto SOI wafers

Author

Strauss, Karl ; Black, Bruce W. ; Joshi, Vikram ; Ohno, Morifumo ; Ida, Jiro ; Nagatomo, Yoshiki

Author_Institution

Jet Propulsion Lab., Pasadena, CA

fYear

0

fDate

0-0 0

Abstract

We report for the first time the successful integration of strontium-bismuth-tantalate (SBT) ferroelectric capacitors on an SOI substrate. We have verified that the unique processing requirements of SBT capacitors does not affect the properties of the surrounding fully depleted silicon on insulator (FD-SOI) transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors. Further, we present total ionization radiation test results on the base, Oki FD-SOI material. We present that processing of the SBT material has no effect on the radiation performance of the FD-SOI transistors

Keywords

bismuth; ferroelectric capacitors; silicon-on-insulator; strontium; tantalum; transistors; Bi; Sr; ferroelectric capacitors; fully depleted silicon-on-insulator transistors; ionization radiation test; silicon-on-insulator wafers; strontium-bismuth-tantalate capacitors; Biological materials; Capacitors; Ferroelectric materials; Laboratories; Nonvolatile memory; Propulsion; Silicon on insulator technology; Strontium; Substrates; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace Conference, 2006 IEEE

Conference_Location

Big Sky, MT

Print_ISBN

0-7803-9545-X

Type

conf

DOI

10.1109/AERO.2006.1655955

Filename

1655955