Direct parametric extraction of 1/f noise source magnitude and physical location from baseband spectra in HBTs

Author

Pehlke, D.R. ; Sailer, A. ; Ho, W.-J. ; Higgins, J.A. ; Chang, M.F.

Author_Institution

Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA

Volume

3

fYear

1996

fDate

17-21 June 1996

Firstpage

1305

Abstract

This work describes a novel equivalent circuit representation for the modeling of low frequency 1/f noise in Heterojunction Bipolar Transistors (HBTs), and is presented as part of an extraction procedure which combines direct calculation of the HBT equivalent circuit from S-parameters, and separate measurement of the base and collector noise voltage spectra to determine the magnitude and physical location of the dominant intrinsic 1/f noise sources within the device.

Keywords

1/f noise; equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; microwave measurement; semiconductor device models; semiconductor device noise; 1/f noise source magnitude; HBTs; baseband spectra; direct parametric extraction; dominant intrinsic noise sources; equivalent circuit representation; extraction procedure; microwave bipolar transistors; noise voltage spectra; physical location; 1f noise; Baseband; Circuit noise; Equivalent circuits; Frequency; Heterojunction bipolar transistors; Impedance; Low-frequency noise; Resistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.512175

Filename

512175