Extraction of low-frequency noise model of self-aligned AlGaAs/GaAs heterojunction bipolar transistor

Author

Jin-Ho Shin ; Yujin Chung ; Youngseok Suh ; Bumman Kim

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Inst. of Sci. & Technol., South Korea

Volume

3

fYear

1996

fDate

17-21 June 1996

Firstpage

1309

Abstract

The first quantitative extraction of low-frequency noise equivalent circuit model of self-aligned AlGaAs/GaAs heterojunction bipolar transistor has been performed. It is based on a generalized small signal circuit model including the base and emitter series resistance noise sources. The dominant noise sources are emitter-base current noise source and the resistance noise source. The emitter-collector current noise source is negligible.

Keywords

III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; semiconductor device noise; AlGaAs-GaAs; base series resistance noise source; emitter series resistance noise source; emitter-base current noise source; equivalent circuit model; generalized small signal circuit model; low-frequency noise model; self-aligned heterojunction bipolar transistor; Circuit noise; Equivalent circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit noise; Low-frequency noise; Microwave oscillators; Noise generators; Phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.512176

Filename

512176