High Aspect Ratio CPW Fabricated Using a Micromachining Process Combining DRIE, Thermal Oxidation, Electroplating, and Planarization

Author

Tod, Shane T. ; Huang, Xiaojun T. ; Bowers, John E. ; MacDonald, Noel C.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA

fYear

2009

fDate

11-14 Oct. 2009

Firstpage

1

Lastpage

4

Abstract

A micromachining process has been developed to fabricate high aspect ratio CPW. The tall conductor sidewall created from the high aspect ratio process reduces the resistance per length of the transmission line which lowers the attenuation. The micromachining process combines Si DRIE, thermal oxidation, electroplating, and planarization to create tall CPW with Au conductors and SiO₂ dielectrics. Transmission lines with characteristic impedances of 16-21 Omega have been fabricated on high resistivity Si. Transmission line characteristics were measured from 1-50 GHz and showed propagation loss of 1.1-1.3 dB/cm at 10 GHz.

Keywords

coplanar transmission lines; coplanar waveguides; micromachining; CPW; Si; SiO₂; characteristic impedance; coplanar waveguides; electroplating; frequency 1 GHz to 50 GHz; micromachining process; planarization; propagation loss; thermal oxidation; transmission line characteristics; Attenuation; Conductors; Coplanar waveguides; Dielectrics; Gold; Micromachining; Oxidation; Planarization; Thermal conductivity; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE

Conference_Location

Greensboro, NC

ISSN

1550-8781

Print_ISBN

978-1-4244-5191-3

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/csics.2009.5315761

Filename

5315761