Millimeter-wave HEMT noise models verified thru V-band

Author

DuFault, M.D. ; Sharma, A.K.

Author_Institution

Electron. Syst. Group, TRW Inc., Redondo Beach, CA, USA

Volume

3

fYear

1996

fDate

17-21 June 1996

Firstpage

1321

Abstract

Further enhancements of a HEMT noise modeling procedure enables scaling of bias dependent noise models. This was experimentally verified through V-band using prematched structures utilizing the TRW 0.1 /spl mu/m gate length low noise process. With this procedure, it is now possible to scale device noise models obtained at microwave frequencies to millimeter wave frequencies with good correlation. The scaled models are further verified with Q- and V-band low noise amplifiers.

Keywords

S-parameters; equivalent circuits; high electron mobility transistors; millimetre wave field effect transistors; millimetre wave measurement; semiconductor device models; semiconductor device noise; semiconductor device testing; 0.1 micron; EHF; MM-wave HEMT noise models; Q-band; V-band; bias dependent noise models; low noise process; millimeter wave frequencies; prematched test structures; Circuit noise; HEMTs; Low-noise amplifiers; Microwave frequencies; Millimeter wave devices; Millimeter wave technology; Noise figure; Scattering parameters; Space technology; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.512179

Filename

512179