DocumentCode
2270809
Title
New aspects concerning the bias and temperature dependence of intrinsic noise generators in extracted FET models
Author
Lardizabal, S.M. ; Dunleavy, L.P. ; Boudiaf, A.
Author_Institution
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Volume
3
fYear
1996
fDate
17-21 June 1996
Firstpage
1325
Abstract
A systematic experimental investigation of FET noise models illustrates bias and temperature dependencies that help to explain differences between two prevalent models. Observations concerning the bias dependence of the popular temperature based noise model show that the gate noise temperature follows the ambient temperature only near the minimum noise bias condition.
Keywords
equivalent circuits; field effect transistors; semiconductor device models; semiconductor device noise; FET noise models; HEMT; MESFET; PHEMT; bias dependence; extracted FET models; gate noise temperature; intrinsic noise generators; minimum noise bias condition; temperature based noise model; temperature dependence; Circuit noise; Design automation; Microwave FETs; Neodymium; Noise figure; Noise generators; PHEMTs; Temperature dependence; Thermal resistance; Working environment noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.512180
Filename
512180
Link To Document