Title :
New aspects concerning the bias and temperature dependence of intrinsic noise generators in extracted FET models
Author :
Lardizabal, S.M. ; Dunleavy, L.P. ; Boudiaf, A.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Abstract :
A systematic experimental investigation of FET noise models illustrates bias and temperature dependencies that help to explain differences between two prevalent models. Observations concerning the bias dependence of the popular temperature based noise model show that the gate noise temperature follows the ambient temperature only near the minimum noise bias condition.
Keywords :
equivalent circuits; field effect transistors; semiconductor device models; semiconductor device noise; FET noise models; HEMT; MESFET; PHEMT; bias dependence; extracted FET models; gate noise temperature; intrinsic noise generators; minimum noise bias condition; temperature based noise model; temperature dependence; Circuit noise; Design automation; Microwave FETs; Neodymium; Noise figure; Noise generators; PHEMTs; Temperature dependence; Thermal resistance; Working environment noise;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.512180
