Title :
External cavity multiwavelength semiconductor laser
Author :
Moskalev, Igor S. ; Mirov, Sergey B. ; Fedorov, Vladimir V. ; Grimes, G.J. ; Basiev, T.T. ; Berman, E. ; Abeles, J.
Author_Institution :
Alabama Univ., Birmingham, AL, USA
Abstract :
Summary from only given. We have demonstrated an external cavity multi-wavelength diode laser based on a novel spatially dispersive resonator scheme. Multi-wavelength oscillation has been achieved with a single broad-stripe diode laser operating at 660 nm and with a 1560 nm multi-stripe diode laser. One of the major advantages of our laser scheme is that it can be build on the basis of a single diode chip as well as a diode array or a multi striped diode.
Keywords :
laser cavity resonators; laser reliability; laser transitions; optical dispersion; optical transmitters; semiconductor device reliability; semiconductor laser arrays; 1560 nm; 660 nm; external cavity multi-wavelength diode laser; high wavelength stability; laser diode array; multi-stripe diode laser; multi-wavelength oscillation; reliability; single broad-stripe diode laser; single diode chip; spatially dispersive resonator scheme; telecomm applications; Electric breakdown; Free electron lasers; Ionization; Laser ablation; Laser modes; Optical pulses; Plasma density; Plasma waves; Quantum cascade lasers; Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034141
