DocumentCode
2270880
Title
Broadly tunable dual-wavelength semiconductor laser in optical-communication band
Author
Chin-Hui Chen ; Ching-Fuh Lin ; Yi-Shin Su ; Chi-Chia Huang ; Bing-Ruey Wu
Author_Institution
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2002
fDate
24-24 May 2002
Firstpage
411
Abstract
Summary from only given. This work reports the successful use of nonidentical MQWs to achieve simultaneously lasing at two wavelengths. The two wavelengths are between 1344 nm to 1514 nm, with the spectral separation tunable from a few nanometers to 170 nm. To achieve the broadband operation at two wavelengths, both the gain medium and the cavity configuration need to be engineered. For gain medium, we use nonidentical MQW structure for the broadband purpose. There are two In/sub 0.53/Ga/sub 0.47/As QWs used in our structure.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; laser tuning; optical transmitters; quantum well lasers; 1344 to 1514 nm; In/sub 0.53/Ga/sub 0.47/As; In/sub 0.53/Ga/sub 0.47/As MQW lasers; MQW structure; broadband operation; broadband purpose; broadly tunable dual-wavelength semiconductor laser; laser transitions; nonidentical MQWs; optical-communication band; simultaneously lasing; spectral separation tunable; Bandwidth; Gratings; Laser tuning; Mirrors; Optical fiber communication; Optical fibers; Quantum well devices; Semiconductor lasers; Semiconductor optical amplifiers; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-706-7
Type
conf
DOI
10.1109/CLEO.2002.1034142
Filename
1034142
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