Title :
Recent progress in wideband monolithic direct digital synthesizers
Author :
Van Andrews, G. ; Delaney, J.B. ; Vernon, M.A. ; Harris, M.P. ; Chang, C.T.M. ; Eiland, T.C. ; Hastings, C.E. ; DiPerna, V.L. ; Brown, M.C. ; White, W.A. ; Kushner, L.J.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
This paper presents recent progress in the development of wideband monolithic GaAs DDSs, since its debut in 1992. A wideband DDS generates sinusoidal waveforms with several hundred megahertz of bandwidth, subhertz resolution and nanosecond frequency switching speeds. A discussion of improvements made to the monolithic GaAs HBT DDS and factors driving design and performance are presented.
Keywords :
III-V semiconductors; bipolar digital integrated circuits; direct digital synthesis; gallium arsenide; GaAs; GaAs HBT DDS; sinusoidal waveform generator; wideband monolithic direct digital synthesizer; Bandwidth; Circuits; Clocks; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Phase control; Read only memory; Synthesizers; Wideband;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.512185
