100 mW external cavity laser with a 1405-1575 nm tuning range

Author

Kudryashov, I. ; Komissarav, A. ; Morris, N. ; Maiorov, M. ; Connolly, J. ; Garbuzov, D. ; Khalfin, V. ; Braun, A. ; Alphonse, G.

Author_Institution

Princeton Lightwave Inc., Cranbury, NJ, USA

fYear

2002

fDate

24-24 May 2002

Firstpage

412

Abstract

Summary from only given. InGaAsP-InP strained multiquantum well structures similar to those described ins were used for tilted ridge waveguide (TRWG) gain chip fabrication. Lateral mode confinement is provided by a dual-channel ridge waveguide structure prepared by conventional photolithography in conjunction with chemical etching.

Keywords

III-V semiconductors; etching; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser tuning; photolithography; quantum well lasers; ridge waveguides; waveguide lasers; 100 mW; 1405 to 1575 nm; InGaAsP-InP; InGaAsP-InP strained multiquantum well structure; chemical etching; dual-channel ridge waveguide structure; gain chip fabrication; lateral mode confinement; mW external cavity laser; photolithography; tilted ridge waveguide; tuning range; Coatings; Diode lasers; Gratings; Laser tuning; Lenses; Mirrors; Optical waveguides; Semiconductor lasers; Semiconductor optical amplifiers; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034143

Filename

1034143