16/spl times/10 GHz multiwavelength mode locked InGaAsP laser with closed loop spectral control

Author

Park, E.D. ; Croeze, T.J. ; Delfyett, P.J., Jr. ; Braun, A. ; Abeles, J.

Author_Institution

Sch. of Opt./CREOL, Univ. of Central Florida, Orlando, FL, USA

fYear

2002

fDate

24-24 May 2002

Firstpage

413

Abstract

Summary from only given. We report on the design and development of a semiconductor optical amplifier based multiwavelength laser. This work expands upon previous efforts utilizing external cavity oscillators based on SOAs at both 830 and 1550 nm. The laser configuration is shown as a unidirectional ring cavity that comprised of 2.3 mm MQW InGaAsP SOA bulk optics.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mode locking; optical design techniques; quantum well lasers; ring lasers; semiconductor optical amplifiers; 1550 nm; 2.3 mm; 830 nm; GHz multiwavelength mode locked InGaAsP laser; InGaAsP; MQW InGaAsP SOA; SOAs; bulk optics; closed loop spectral control; design; external cavity oscillators; laser configuration; multiwavelength laser; multiwavelength mode locked laser; semiconductor optical amplifier; unidirectional ring cavity; Distributed feedback devices; Gratings; Laser feedback; Laser modes; Laser tuning; Optical control; Optical waveguides; Power lasers; Semiconductor lasers; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034144

Filename

1034144