DocumentCode :
2270965
Title :
Ultra Low Power 60 GHz ASK SiGe Receiver with 3-6 GBPS Capabilities
Author :
Shin, Woorim ; Uzunkol, Mehmet ; Rebeiz, Gabriel M.
Author_Institution :
Electr. & Comput. Eng., Univ. of California, San Diego, CA, USA
fYear :
2009
fDate :
11-14 Oct. 2009
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents an ultra low power 60 GHz SiGe ASK receiver capable of 3-6 Gbps communications. The receiver is based on a 4-stage low-noise amplifier and an ASK detector, all in a 0.12 um SiGe transistor technology. The LNA and ASK detector were designed for wide bandwidth in order to result in a very high data rate. The LNA+Detector chip consumes 11 mW and is capable of 3-6 Gbps communications with a BER < 10-12 for an input power of -36 dBm. At an input power of -44 dBm, the system can maintain a 3 Gbps link with a BER <10-9. This translates to 3.3-1.6 pJ/bit for the LNA+Detector, and to our knowledge, is the state of the art. The chip was tested up to 105degC and maintained >3 Gbps with a BER <10-12 over the entire temperature range.
Keywords :
Ge-Si alloys; error statistics; radio receivers; transistors; ASK detector; ASK receiver; BER; bit rate 3 Gbit/s to 6 Gbit/s; frequency 60 GHz; input power; low noise amplifier; temperature range; transistor technology; ultra low power; wide bandwidth; Amplitude shift keying; Bit error rate; Detectors; Frequency; Germanium silicon alloys; Horn antennas; Noise measurement; Semiconductor device measurement; Silicon germanium; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Conference_Location :
Greensboro, NC
ISSN :
1550-8781
Print_ISBN :
978-1-4244-5191-3
Electronic_ISBN :
1550-8781
Type :
conf
DOI :
10.1109/csics.2009.5315799
Filename :
5315799
Link To Document :
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