Title :
Silicon Carbide devices open a new era of power electronics
Author_Institution :
ROHM Co., Ltd., Kyoto, Japan
Abstract :
Silicon Carbide (SiC) devices have the potential to reduce energy losses in high power applications. However SiC devices have yet to achieve ideal performance levels. This paper presents SiC diodes and MOSFETs with advanced trench structures. These devices succeeded in improving performance by reduction of the internal electric field. Trench Schottky diodes are able to reduce forward voltage drop and double-trench MOSFETs show extremely low on-resistance. In addition, transfer-molded power modules using SiC devices demonstrated high temperature operation and high power density.
Keywords :
MOSFET; Schottky diodes; silicon compounds; wide band gap semiconductors; SiC; advanced trench structures; double-trench MOSFET; energy loss reduction; forward voltage drop; high-power applications; internal electric field reduction; power density; power electronics; silicon carbide MOSFET; silicon carbide devices; silicon carbide diodes; transfer-molded power modules; trench Schottky diodes; Electric fields; Logic gates; MOSFETs; Performance evaluation; Schottky diodes; Silicon; Silicon carbide;
Conference_Titel :
VLSI Design, Automation, and Test (VLSI-DAT), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2080-2
DOI :
10.1109/VLSI-DAT.2012.6212585
