Silicon Carbide devices open a new era of power electronics

Author

Takasu, Hidemi

Author_Institution

ROHM Co., Ltd., Kyoto, Japan

fYear

2012

fDate

23-25 April 2012

Firstpage

1

Lastpage

2

Abstract

Silicon Carbide (SiC) devices have the potential to reduce energy losses in high power applications. However SiC devices have yet to achieve ideal performance levels. This paper presents SiC diodes and MOSFETs with advanced trench structures. These devices succeeded in improving performance by reduction of the internal electric field. Trench Schottky diodes are able to reduce forward voltage drop and double-trench MOSFETs show extremely low on-resistance. In addition, transfer-molded power modules using SiC devices demonstrated high temperature operation and high power density.

Keywords

MOSFET; Schottky diodes; silicon compounds; wide band gap semiconductors; SiC; advanced trench structures; double-trench MOSFET; energy loss reduction; forward voltage drop; high-power applications; internal electric field reduction; power density; power electronics; silicon carbide MOSFET; silicon carbide devices; silicon carbide diodes; transfer-molded power modules; trench Schottky diodes; Electric fields; Logic gates; MOSFETs; Performance evaluation; Schottky diodes; Silicon; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, Automation, and Test (VLSI-DAT), 2012 International Symposium on

Conference_Location

Hsinchu

ISSN

PENDING

Print_ISBN

978-1-4577-2080-2

Type

conf

DOI

10.1109/VLSI-DAT.2012.6212585

Filename

6212585