• DocumentCode
    227135
  • Title

    Influence of the excitation frequency increase on a fluid model of the capacitively coupled argon plasma

  • Author

    Leszczynski, S. ; Strobel, C. ; Albert, M. ; Bartha, J.W. ; Stephan, U.

  • Author_Institution
    Dresden University of Technology, Semiconductor and Microsystems Technology Laboratory, 01062, Germany
  • fYear
    2014
  • fDate
    25-29 May 2014
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    A very high frequency plasma enhanced chemical vapor deposition technology (VHF PECVD) is widely used for deposition of amorphous and microcrystalline silicon layers1. The satisfying deposition rates and process efficiency combined with adequate material quality make this technology a good solution in the industry applications, especially in the large scale deposition systems.
  • Keywords
    Argon; Educational institutions; Inductors; Plasmas; Semiconductor device modeling; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Sciences (ICOPS) held with 2014 IEEE International Conference on High-Power Particle Beams (BEAMS), 2014 IEEE 41st International Conference on
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    978-1-4799-2711-1
  • Type

    conf

  • DOI
    10.1109/PLASMA.2014.7012209
  • Filename
    7012209
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=227135