Title :
Influence of the excitation frequency increase on a fluid model of the capacitively coupled argon plasma
Author :
Leszczynski, S. ; Strobel, C. ; Albert, M. ; Bartha, J.W. ; Stephan, U.
Author_Institution :
Dresden University of Technology, Semiconductor and Microsystems Technology Laboratory, 01062, Germany
Abstract :
A very high frequency plasma enhanced chemical vapor deposition technology (VHF PECVD) is widely used for deposition of amorphous and microcrystalline silicon layers1. The satisfying deposition rates and process efficiency combined with adequate material quality make this technology a good solution in the industry applications, especially in the large scale deposition systems.
Keywords :
Argon; Educational institutions; Inductors; Plasmas; Semiconductor device modeling; Silicon;
Conference_Titel :
Plasma Sciences (ICOPS) held with 2014 IEEE International Conference on High-Power Particle Beams (BEAMS), 2014 IEEE 41st International Conference on
Conference_Location :
Washington, DC, USA
Print_ISBN :
978-1-4799-2711-1
DOI :
10.1109/PLASMA.2014.7012209
