Title :
The optical performance of microwave transistors
Author :
De Barros, L.E.M., Jr. ; Paolella, A. ; Herczfeld, Peter R. ; de Salles, A.A.A.
Author_Institution :
Centre for Microwave-Lightwave Eng., Drexel Univ., Philadelphia, PA, USA
Abstract :
This paper renders a thorough analysis of the optical properties of microwave transistors, HBT, MESFET and HEMT. The principal photoresponse mechanisms are identified and compared in terms of gain, frequency response and sensitivity. The paper highlights newly observed effects in the HBT, where high speed and gain are realizable.
Keywords :
Schottky gate field effect transistors; frequency response; heterojunction bipolar transistors; high electron mobility transistors; microwave transistors; photoconductivity; photovoltaic effects; sensitivity; HBT; HEMT; MESFET; frequency response; gain; microwave transistors; optical performance; photoresponse mechanisms; sensitivity; HEMTs; Heterojunction bipolar transistors; High speed optical techniques; MESFETs; Microwave devices; Microwave transistors; Optical devices; Optical receivers; Optical sensors; Photoconductivity;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.512208
