Finite difference analysis of thermal characteristics of continuous wave operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design

Author

Mehandru, R. ; Dang, G. ; Luo, B. ; Kim, S. ; Ren, F. ; Pearton, S.J. ; Hobson, W.S. ; Lopata, J. ; Tayahi, M. ; Chang, W. ; Shen, H.

Author_Institution

Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA

fYear

2002

fDate

24-24 May 2002

Firstpage

436

Abstract

Summary form only given. The VCSELs of this work are based on an implanted-aperture, index-guided, lateral current injected, top dielectric mirror GaAs quantum well 850 nm design. The thermal simulation employs quasi-three dimensional finite difference analysis to calculate the temperature, thermal resistance and the rise time of temperature at a fixed bias to calculate the nonuniform heat source distribution.

Keywords

III-V semiconductors; finite difference methods; flip-chip devices; gallium arsenide; heat conduction; infrared sources; laser mirrors; laser transitions; quantum well lasers; surface emitting lasers; thermal analysis; 850 nm; GaAs; GaAs quantum well lasers; VCSELs; implanted-aperture; index-guided; lateral current injected; nonuniform heat source distribution; quasi-three dimensional finite difference analysis; rise time; thermal simulation; top dielectric mirror; Analytical models; Bonding; Dielectrics; Finite difference methods; Gallium arsenide; Mirrors; Resistance heating; Temperature distribution; Thermal resistance; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034170

Filename

1034170