Materials analysis of degraded vertical cavity surface emitting lasers

Author

Mathes, D.T. ; Hull, R. ; Choquette, Kent D. ; Geib, Kent M. ; Allerman, A.A.

Author_Institution

Dept. of Mater. Sci. & Eng., Virginia Univ., Charlottesville, VA, USA

fYear

2002

fDate

24-24 May 2002

Firstpage

437

Abstract

Summary from only given. Using TEM and novel focused ion beam (FIB) sectioning techniques we have investigated the mechanisms that are responsible for VCSEL degradation and failure. The main cause of failure is the generation of complex dislocation dipole and loop arrays likely by non-radiative recombination enhanced mechanisms. Dislocations punched out due to oxide-induced strain or dislocations with origins in the substrate or surface appear to act as nucleation sites for these complex arrays.

Keywords

focused ion beam technology; laser reliability; nucleation; optical testing; semiconductor device reliability; semiconductor device testing; semiconductor lasers; surface emitting lasers; transmission electron microscopy; TEM; VCSEL degradation; VCSEL failure; complex arrays; complex dislocation dipole arrays; degraded vertical cavity surface emitting lasers; dislocations; focused ion beam sectioning technique; loop arrays; materials analysis; nonradiative recombination enhanced mechanisms; nucleation sites; oxide-induced strain; Degradation; Dielectrics; Mirrors; Optical fiber communication; Optical materials; Optical surface waves; Reflectivity; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034173

Filename

1034173