10 and 26 GHz differential VCOs using InP HBTs

Author

Montgomery, R.K. ; Humphrey, D.A. ; Hamm, R. ; Ren, F. ; Malik, R.J. ; Kopf, R.F. ; Tate, A. ; Smith, P.R. ; Ryan, R.W. ; Lin, J. ; Chen, Y.K.

Author_Institution

Lucent Technol., Whippany, NJ, USA

Volume

3

fYear

1996

fDate

17-21 June 1996

Firstpage

1507

Abstract

We have built 10 and 26 GHz differential VCOs using InP HBTs. Both oscillators use a 3 stage emitter coupled pair ring section. The 10 GHz VCO is connected in the well known fashion but the 26 GHz circuit uses a patented summed output from each of the three ECP (Emitter Coupled Pair) stages. The circuits are powered from a single 5 V supply consuming 250 mW. The chip size is 870/spl times/975 /spl mu/m/sup 2/. The phase noise at a 100 kHz offset for the 10 and 26 GHz oscillators is 83 dBc/Hz and -70 dBc/Hz respectively.

Keywords

III-V semiconductors; MMIC oscillators; bipolar MMIC; heterojunction bipolar transistors; indium compounds; integrated circuit measurement; microwave oscillators; phase noise; voltage-controlled oscillators; 10 GHz; 250 mW; 26 GHz; 5 V; HBTs; InP; chip size; differential VCOs; emitter coupled pair ring section; offset; phase noise; summed output; Coupling circuits; Frequency estimation; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Phase noise; Ring oscillators; Tin; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.512222

Filename

512222