A Ku-band ultra super low-noise pseudomorphic heterojunction FET in a hollow plastic PKG

Author

Hirokawa, T. ; Negishi, H. ; Nishimura, Y. ; Ichikawa, S. ; Tanaka, J. ; Kimura, Tomohiro ; Watanabe, K. ; Nashimoto, Y.

Author_Institution

Compound Semicond. Device Div., NEC Corp., Kawasaki, Japan

Volume

3

fYear

1996

fDate

17-21 June 1996

Firstpage

1603

Abstract

This paper reports Ku-band ultra super low-noise pseudomorphic heterojunction FETs (pHJFETs) in a newly developed hollow plastic package. To achieve higher performance of pHJFETs, we employed further optimized epilayer structure with good interfacial quality. The developed packaged HJFETs with 0.17 um T-shaped gate exhibited extremely low noise performance of 0.35 dB typical noise figure with 12.5 dB associated gain at 12 GHz.

Keywords

junction gate field effect transistors; microwave field effect transistors; plastic packaging; semiconductor device noise; semiconductor device packaging; 0.17 micron; 0.35 dB; 12 GHz; 12.5 dB; HJFET; Ku-band; SHF; T-shaped gate; hollow plastic package; optimized epilayer structure; pseudomorphic heterojunction FET; ultra low-noise device; Assembly; Electron mobility; FETs; Fingers; Frequency; Hall effect; Heterojunctions; Lithography; Microwave Theory and Techniques Society; Plastic packaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.512244

Filename

512244