Effect of device layout on the thermal resistance of high-power thermally-shunted heterojunction bipolar transistors

Author

Dettmer, R. ; Jenkins, T. ; Barrette, J. ; Bozada, C. ; DeSalvo, G. ; Ebel, J. ; Gillespie, J. ; Havasy, C. ; Ito, C. ; Nakano, K. ; Pettiford, C. ; Quach, T. ; Sewell, J. ; Via, D. ; Anholt, R.

Author_Institution

Wright Lab., Wright Res. & Dev. Center, Wright-Patterson AFB, OH, USA

Volume

3

fYear

1996

fDate

17-21 June 1996

Firstpage

1607

Abstract

The effect of device layout on thermal impedance of thermally-shunted HBTs was investigated. A direct comparison of thermally shunted devices and standard airbridge devices is made. Changes in thermal resistance of up to 67% were observed. While thermal resistance remains sensitive to emitter element placement in thermally shunted devices, variations in the location of thermal shunt landings had little effect. These results provide a basis for optimizing thermally-shunted devices.

Keywords

current distribution; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; thermal resistance; device layout; emitter element placement; heterojunction bipolar transistors; high-power HBT; thermal impedance; thermal resistance; thermal shunt landings; thermally-shunted bipolar transistors; Current distribution; Fingers; Heat sinks; Heterojunction bipolar transistors; Impedance; Laboratories; Temperature; Thermal force; Thermal management; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.512245

Filename

512245