DocumentCode
2272297
Title
Test for more than pass/fail using on-chip temperature sensor
Author
Wang, Chih-Wea ; Lin, Chen-Tung ; Hsu, Chun-Chieh ; Wu, Ching-Tung ; Wu, Chi-Feng
Author_Institution
Realtek Semicond. Corp., Hsinchu, Taiwan
fYear
2012
fDate
23-25 April 2012
Firstpage
1
Lastpage
4
Abstract
In modern SoCs, process variations represented as process corners, which designers deal with sufficient design margins. As feature sizes shrink below 90 nm, the effects of process variations are also increasing severely. Moreover, circuit performance and power consumption are strongly impacted by environmental conditions under which the circuit operates. For example, thermal hot spots increase leakage, degrade timing/stability, and reduce battery lifetime. Both of increasing process variations and environment variations are now modeled in design corners, and corresponding design margin overheads have reduced the benefit of shrinking process node. In this paper, we first address the design margin problem. With accurate temperature sensor and speed sensor implemented in our SoC application, we can measure the process and environment variations on each chip. Proceeding on-filed design model correlation with realistic variation information can further reduce unnecessary design margins and improve the accuracy of process modeling. Furthermore, we can utilize the temperature sensor to construct the temperature profile, and improve the system performance and power consumption.
Keywords
integrated circuit design; integrated circuit testing; low-power electronics; system-on-chip; temperature sensors; SoC; environment variations; on-chip temperature sensor; on-filed design; pass/fail; power consumption; shrinking process node; temperature profile; thermal hot spots; Delay; Photonic band gap; Silicon; System-on-a-chip; Temperature measurement; Temperature sensors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, Automation, and Test (VLSI-DAT), 2012 International Symposium on
Conference_Location
Hsinchu
ISSN
PENDING
Print_ISBN
978-1-4577-2080-2
Type
conf
DOI
10.1109/VLSI-DAT.2012.6212639
Filename
6212639
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