Title :
Amorphization of silicon via electronic processes induced by fullerenes irradiations
Author :
Canut, B. ; Bonardi, N. ; Ramos, S.M.M. ; Della-Negra, S.
Author_Institution :
Dept. de Phys. des Mater., Univ. Claude Bernard, Villeurbanne, France
Abstract :
For the first time we show that single crystalline silicon is sensitive to collective electronic excitations. Irradiations with C60 clusters accelerated in the 10 MeV range induce the formation of amorphous latent tracks in this material
Keywords :
amorphisation; amorphous semiconductors; elemental semiconductors; ion beam effects; silicon; 10 MeV; 10 MeV range; C60; C60 clusters; Si; amorphous latent tracks; collective electronic excitations; electronic processes; fullerenes irradiations; Acceleration; Amorphous materials; Crystalline materials; Crystallization; Electrons; Energy loss; Particle beams; Projectiles; Silicon; Tin;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858544
