VLSI CAD for emerging nanolithography

Author

Pan, David Z. ; Gao, Jhih-Rong ; Yu, Bei

Author_Institution

Dept. of ECE, Univ. of Texas at Austin, Austin, TX, USA

fYear

2012

fDate

23-25 April 2012

Firstpage

1

Lastpage

4

Abstract

In this paper, we discuss emerging nanolithography technologies including double/multiple patterning, extreme ultra-violet lithography, electron-beam lithography, and their interactions with VLSI CAD. These technologies all have different manufacturing processes with their own challenges/issues. Meanwhile, nanometer VLSI designs and mask synthesis have to be co-optimized with these process technologies to ensure high product quality (performance/power/area, etc.), yield, and throughput to make future scaling worthwhile. Some recent results will be presented to show the enablement and effectiveness of such design and process integration.

Keywords

CAD; VLSI; circuit optimisation; electron beam lithography; nanolithography; ultraviolet lithography; VLSI CAD; double/multiple patterning; electron-beam lithography; extreme ultraviolet lithography; mask synthesis; nanolithography; nanometer VLSI designs; optimization; Design automation; Layout; Lithography; Optimization; Routing; Solid modeling; Ultraviolet sources; Electric Beam; Extreme Ultraviolet Lithography; Layout Decomposition; Layout Optimization; Multiple Patterning Lithography;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, Automation, and Test (VLSI-DAT), 2012 International Symposium on

Conference_Location

Hsinchu

ISSN

PENDING

Print_ISBN

978-1-4577-2080-2

Type

conf

DOI

10.1109/VLSI-DAT.2012.6212644

Filename

6212644