Title :
VLSI CAD for emerging nanolithography
Author :
Pan, David Z. ; Gao, Jhih-Rong ; Yu, Bei
Author_Institution :
Dept. of ECE, Univ. of Texas at Austin, Austin, TX, USA
Abstract :
In this paper, we discuss emerging nanolithography technologies including double/multiple patterning, extreme ultra-violet lithography, electron-beam lithography, and their interactions with VLSI CAD. These technologies all have different manufacturing processes with their own challenges/issues. Meanwhile, nanometer VLSI designs and mask synthesis have to be co-optimized with these process technologies to ensure high product quality (performance/power/area, etc.), yield, and throughput to make future scaling worthwhile. Some recent results will be presented to show the enablement and effectiveness of such design and process integration.
Keywords :
CAD; VLSI; circuit optimisation; electron beam lithography; nanolithography; ultraviolet lithography; VLSI CAD; double/multiple patterning; electron-beam lithography; extreme ultraviolet lithography; mask synthesis; nanolithography; nanometer VLSI designs; optimization; Design automation; Layout; Lithography; Optimization; Routing; Solid modeling; Ultraviolet sources; Electric Beam; Extreme Ultraviolet Lithography; Layout Decomposition; Layout Optimization; Multiple Patterning Lithography;
Conference_Titel :
VLSI Design, Automation, and Test (VLSI-DAT), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2080-2
DOI :
10.1109/VLSI-DAT.2012.6212644
