Preparation, structural and morphological properties of nanostructure ZnO films by sol gel spin coating

Author

Caglar, Mujdat ; Ruzgar, Serif

Author_Institution

Anadolu Univ., Eskisehir, Turkey

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

1

Lastpage

2

Abstract

In preset study, the sol-gel method was used to deposit ZnO films and silicon substrates were used as substrate. The effects of deposition temperature on the structural and morphological properties of ZnO films were investigated. X-ray diffraction (XRD) measurement showed that the ZnO films were crystallized in the hexagonal wurtzite phase and presented a preferential orientation along the c-axis. The current-voltage (I-V) characteristics of the diode were performed using a KEITHLEY 2400 sourcemeter. The pn heterojunction diode was fabricated and the diode parameters were determined from the analysis of the measured dark current-voltage curves. Rectifying behavior was observed from the I-V characteristics of these heterojunction diodes.

Keywords

II-VI semiconductors; X-ray diffraction; dark conductivity; elemental semiconductors; nanostructured materials; p-n heterojunctions; rectification; semiconductor thin films; silicon; sol-gel processing; spin coating; surface treatment; zinc compounds; Si; X-ray diffraction; XRD measurement; ZnO; ZnO film deposition; ZnO film morphological properties; ZnO film preparation; ZnO film structural properties; dark current-voltage curves; deposition temperature effects; diode current-voltage characteristics; diode parameters; hexagonal wurtzite phase; nanostructured ZnO films; p-n heterojunction diode; rectifying behavior; silicon substrates; sol-gel spin coating; sourcemeter measurements; Coatings; Light emitting diodes; Substrates; Temperature; Temperature measurement; X-ray scattering; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electron Sources Conference (IVESC), 2014 Tenth International

Conference_Location

St. Petersburg

Print_ISBN

978-1-4799-5770-5

Type

conf

DOI

10.1109/IVESC.2014.6891960

Filename

6891960