DocumentCode
2272431
Title
Modeling BJT radiation response with non-uniform energy distributions of interface traps
Author
Barnaby, H.J. ; Cirba, C. ; Schrimpf, R.D. ; Kosie, S.L. ; Fouillat, P. ; Montagner, X.
Author_Institution
Dept. of Electr. & Comuput. Eng., Vanderbilt Univ., Nashville, TN, USA
fYear
1999
fDate
1999
Firstpage
75
Lastpage
79
Abstract
Radiation-induced oxide defects that degrade electrical characteristics of BJTs can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation
Keywords
bipolar transistors; interface states; junction gate field effect transistors; radiation effects; semiconductor device models; surface potential; BJT radiation response modelling; degrade electrical characteristics; interface traps; nonuniform energy distributions; oxide defects; Cathodes; Computational modeling; Computer simulation; Degradation; Diodes; Electric variables; Electric variables measurement; Ionizing radiation; Manufacturing processes; Monitoring;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location
Fontevraud
Print_ISBN
0-7803-5726-4
Type
conf
DOI
10.1109/RADECS.1999.858549
Filename
858549
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