Title :
Modeling BJT radiation response with non-uniform energy distributions of interface traps
Author :
Barnaby, H.J. ; Cirba, C. ; Schrimpf, R.D. ; Kosie, S.L. ; Fouillat, P. ; Montagner, X.
Author_Institution :
Dept. of Electr. & Comuput. Eng., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Radiation-induced oxide defects that degrade electrical characteristics of BJTs can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation
Keywords :
bipolar transistors; interface states; junction gate field effect transistors; radiation effects; semiconductor device models; surface potential; BJT radiation response modelling; degrade electrical characteristics; interface traps; nonuniform energy distributions; oxide defects; Cathodes; Computational modeling; Computer simulation; Degradation; Diodes; Electric variables; Electric variables measurement; Ionizing radiation; Manufacturing processes; Monitoring;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858549
