DocumentCode :
2272523
Title :
Variable gain active predistorter with linearity enhancement for a 2.4 GHz SiGe HBT power amplifier design
Author :
Lin, Kuei-Cheng ; Chiou, Hwann-Kaeo ; Wu, Po-Chang ; Sha, Chu-Jung ; Ko, Chun-Lin ; Chang, Da-Chiang ; Juang, Ying-Zong
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fYear :
2012
fDate :
23-25 April 2012
Firstpage :
1
Lastpage :
4
Abstract :
This paper proposes a 2.4 GHz SiGe HBT differential power amplifier (PA) with a novel on-chip variable gain active predistorter (PD) for linearity enhancement. The fully differential active PD provides an open collector adaptive bias control which can effectively enhance the linearity while improve power added efficiency (PAE). The PA with active PD achieves an output 1-dB compression (OP1dB) of 20 dBm, a gain control range of 10 dB, a PAE of 30%, and an error vector magnitude (EVM) improvement of 2.4 % under OFDM/64-QAM modulation signal. The fabricated die size including pads is less than 0.74 mm2 and suitable for highly integrated linear PA.
Keywords :
OFDM modulation; heterojunction bipolar transistors; power amplifiers; quadrature amplitude modulation; silicon compounds; OFDM/64-QAM modulation signal; SiGe; SiGe HBT power amplifier design; differential active PD; error vector magnitude; frequency 2.4 GHz; linearity enhancement; on-chip variable gain active predistorter; open collector adaptive bias control; power added efficiency; Gain; Heterojunction bipolar transistors; Linearity; OFDM; Power amplifiers; Silicon germanium; Active predistorter; SiGe HBT; error vector magnitude (EVM); power added efficiency (PAE); power amplifier (PA);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation, and Test (VLSI-DAT), 2012 International Symposium on
Conference_Location :
Hsinchu
ISSN :
PENDING
Print_ISBN :
978-1-4577-2080-2
Type :
conf
DOI :
10.1109/VLSI-DAT.2012.6212650
Filename :
6212650
Link To Document :
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