DocumentCode
2272613
Title
Determining timing for isothermal pulsed-bias S-parameter measurements
Author
Parker, A. ; Scott, J. ; Rathmell, J. ; Sayed, M.
Author_Institution
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Volume
3
fYear
1996
fDate
17-21 June 1996
Firstpage
1707
Abstract
S-parameters measured under pulsed conditions are shown to vary from their steady-state values with pulse measurement width and pulse repetition rate. A method is presented for determining suitable timing for isothermal, pulsed-bias, pulsed-RF, S-parameter measurement of GaAs devices. Variation of S-parameters with wafer temperature and with measurement duration and duty cycle are correlated.
Keywords
III-V semiconductors; S-parameters; gallium arsenide; microwave field effect transistors; microwave measurement; timing; GaAs; GaAs FET; isothermal pulsed-bias pulsed-RF S-parameter measurements; timing; FETs; Gallium arsenide; Isothermal processes; Pulse measurements; Radio frequency; Scattering parameters; Space vector pulse width modulation; Temperature measurement; Time measurement; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.512270
Filename
512270
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