Title :
Accurate modeling of noise fluctuations in mm-wave semiconductor devices and their spatial and frequency dependence
Author :
Abou-Elnour, A. ; Schunemann, K.
Author_Institution :
Arbeitsbereich Hochfrequenztech., Tech. Univ. Hamburg-Harburg, Germany
Abstract :
A rigorous model is developed to determine the noise fluctuations in millimeter-wave semiconductor devices and their spatial and frequency dependence. First the model is generally described and then it is applied to characterize the operation and to accurately interpret the noise performance of sub-quarter micrometer gate-length FETs by making use of the noise matrix which describes the noise fluctuations in the different device regions and electrodes and their correlations.
Keywords :
millimetre wave field effect transistors; semiconductor device models; semiconductor device noise; 0.25 micron; FET; frequency dependence; millimeter-wave semiconductor device; model; noise fluctuations; noise matrix; spatial dependence; Electrodes; Fluctuations; Gallium arsenide; Microwave Theory and Techniques Society; Poisson equations; Scattering; Semiconductor device noise; Semiconductor devices; Strontium; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.512273
